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SI1501DL Datasheet, PDF (1/2 Pages) Vishay Siliconix – Complementary 20-V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
Channel
VDS (V)
N-Channel
20
P-Channel
−20
rDS(on) (W)
2.0 @ VGS = 4.5 V
2.5 @ VGS = 2.5 V
3.8 @ VGS = −4.5 V
5.0 @ VGS = −2.5 V
ID (mA)
250
150
−180
−100
Product specification
SI1501DL
SOT-363
SC-70 (6-Leads)
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
Top View
Marking Code
RE XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
PD
TJ, Tstg
20
−20
"8
"8
250
−180
200
−140
500
−500
0.20
0.13
−55 to 150
Unit
V
mA
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Symbol
RthJA
Limit
625 (Total)
Unit
_C/W
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