SI1302DL Datasheet, PDF (1/2 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Product specification
SI1302DL
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.480 @ V_GS = 10 V
30
0.700 @ V_GS = 4.5 V
I_D (A)
0.64
0.53
SOT-323
SC-70 (3-LEADS)
G1
3D
S2
Top View
Marking Code
KA XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
0.64
0.60
0.51
0.48
1.5
0.26
0.23
0.31
0.28
0.20
0.18
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Symbol
R_thJA
R_thJF
Typical
355
380
285
Maximum
400
450
340
Unit
_C/W
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