SD103BWS Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – SURFACE MOUNT SCHOTTKY BARRIER DIODE

Product specification
SOD-323 Plastic-Encapsulate Diodes
SD103AWS-SD103CWS SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop
z Guard Ring Construction for Transient Protection
z Negligible Reverse Recovery Time
z Low Reverse Capacitance
MARKING: SD103AWS: S4
SD103BWS: S5
SD103CWS: S6
SOD-323
+
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol SD103AWS SD103BWS
Peak Repetitive Peak Reverse Voltage
V_RRM
Working Peak Reverse Voltage
V_RWM
40
30
DC Blocking Voltage
V_R
RMS Reverse Voltage
V_R(RMS)
28
21
Forward Continuous Current
I_FM
350
1RQUepetitive Peak Forward Surge
Current @t≤ 1s
I_FSM
1.5
Power Dissipation
Pd
200
Thermal Resistance Junction to Ambient
R_θJA
500
Junction Temperature
Tj
125
Storage Temperature
T_STG
-55~+150
SD103CWS
20
14
Unit
V
V
mA
A
mW
℃/W
℃
℃
Electrical Ratings @Ta=25℃
Parameter
Symb
Min Typ Max Unit
ol
Reverse breakdown voltage
SD103AWS
40
SD103BWS ^{V (BR)R} 30
V
SD103CWS
20
Forward voltage
V_F
0.37
V
0.60
Reverse current
SD103AWS
SD103BWS ^IRM
5.0
μA
SD103CWS
Capacitance between terminals
C_T
50
pF
Reverse recovery time
t_rr
10
ns
Conditions
I_R=100μA
I_R=100μA
I_R=100μA
I_F=20mA
I_F=200mA
V_R=30V
V_R=20V
V_R=10V
V_R=0V,f=1.0MHz
I_F=I_R=200mA
Irr=0.1XI_R,R_L=100Ω
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