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| SD103AW_1 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 400mW Schottky Barrier Switching Diode | |||
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Product specification
SOD-123 Plastic-Encapsulate Diodes
SD103AW-SD103CW SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop
z Guard Ring Construction for Transient Protection
z Negligible Reverse Recovery Time
z Low Capacitance
SOD-123
MARKING: SD103AW:S4
SD103BW:S5
SD103CW:S6
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Symbol
Parameter
VRRM
VRWM
VR(RMS)
IFM
IFSM
PD
RÎJA
Tj
Tstg
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
RMS Reverse Voltage
Forward Continuous Current
Non-repetitive Peak Forward Surge Current @ tâ¤1s
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
Unit
SD103AW SD103BW SD103CW
40
30
20
V
28
21
14
V
350
mA
2
A
400
mW
250
125
-55~+150
â/W
â
â
ELECTRICAL CHARACTERISTICS(Ta=25â unless otherwise specified)
Parameter
Reverse voltage
Symbol
V(BR)
Test conditions
Min Typ Max Unit
IR=100μA
SD103AW 40
SD103BW
30
V
SD103CW
20
Reverse current
Forward voltage
VR=30V
IR
VR=20V
VR=10V
IF=20mA
VF
IF=200mA
SD103AW
SD103BW
SD103CW
5
μA
0.37
V
0.6
Total capacitance
Reverse recovery time
Ctot
VR=0V,f=1MHz
trr
IF= IR=200mA, Irr=0.1ÃIR, RL=100â¦
50
pF
10
ns
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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