S9014 Datasheet, PDF (1/1 Pages) Weitron Technology – NPN General Purpose Transistors

Product specification
S9014-B
S9014-C
S9014-D
Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 0.4Watts(Tamb=25^OC) of Power Dissipation.
• Collector-current 0.1A
• Collector-base Voltage 50V
• Operating and storage junction temperature range: -55^OC to +150^OC
• Marking : S9014
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
C
BE
TO-92
A
E
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
ICEO
IEBO
Collector-Base Breakdown Voltage
(I_C=100uAdc, I_E=0)
Collector-Emitter Breakdown Voltage
(I_C=0.1mAdc, I_B=0)
Emitter-Base Breakdown Voltage
(I_E=100uAdc, I_C=0)
Collector Cutoff Current
(V_CB=50Vdc, I_E=0)
Collector Cutoff Current
(V_CE=35Vdc, I_B=0)
Emitter Cutoff Current
(V_EB=3.0Vdc, I_C=0)
ON CHARACTERISTICS
50
---
Vdc
45
---
Vdc
5.0
---
Vdc
---
0.1
uAdc
---
0.1
uAdc
---
0.1 uAdc
h_FE
DC Current Gain
(IC=1.0mAdc, VCE=5.0Vdc)
V_CE(sat)
V_BE(sat)
Collector-Emitter Saturation Voltage
(I_C=100mAdc, I_B=5.0mAdc)
Base-Emitter Saturation Voltage
(I_C=100mAdc, I_B=5.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
60
1000
---
---
0.3
Vdc
---
1.0
Vdc
f_T
Transistor Frequency
150
---
MHz
(I_C=10mAdc, V_CE=5.0Vdc, f=30MHz)
CLASSIFICATION OF HFE
Rank
B
Range
100-300
C
200-600
D
400-1000
B
C
D
G
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
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