RYC002N05 Datasheet, PDF(1/2 Page) Rohm – 0.9V Drive Nch MOSFET

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

RYC002N05 Datasheet, PDF (1/2 Pages) Rohm – 0.9V Drive Nch MOSFET

0.9V Drive Nch MOSFET

ï¬ Structure

Silicon N-channel MOSFET

ï¬Features

1) High speed switing.

2) Small package(SST3).

3)Ultra low voltage drive(0.9V drive).

ï¬ Application

Switching

Product specification

RYC002N05

ï¬ Dimensions (Unit : mm)

SST3

<SOT-23>

Abbreviated symbol : QJ

ï¬ Packaging specifications

Package

Type Code

Basic ordering unit (pieces)

RYC002N05

Taping

T316

3000

ï¡

ï¬ Absolute maximum ratings (Ta = 25ï°C)

Parameter

Symbol

Limits

Unit

Drain-source voltage

Gate-source voltage

Drain current

Continuous

Pulsed

Source current

(Body Diode)

Continuous

Pulsed

Power dissipation

Channel temperature

Range of storage temperature

VDSS

50

V

VGSS

ï±8

V

ID

ï±200

mA

IDP *1

ï±800

mA

IS

150

mA

ISP *1

800

mA

PD *2

200

mW

Tch

150

ï°C

Tstg ï55 to ï«150 ï°C

*1 Pwï£10ïs, Duty cycleï£1%

*2 Each terminal mounted on a recommended land.

ï¬ Inner circuit

(3)

(1) Source

(2) Gate

(3) Drain

â1

â2

(2)

(1)

â1 BODY DIODE

â2 ESD PROTECTION DIODE

ï¬ Thermal resistance

Parameter

Channel to Ambient

* Each terminal mounted on a recommended land.

Symbol

Rth (ch-a)*

Limits

625

Unit

ï°C / W

http://www.twtysemi.com

sales@twtysemi.com

1 of 2

▷