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| RU1E002SP Datasheet, PDF (1/2 Pages) Rohm – 4V Drive Pch MOSFET | |||
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Product specification
RU1E002SP
ï¬ Structure
TY P-channel MOSFET
ï¬Features
1) High-speed switching.
2) Small package (UMT3F).
3) 4V drive.
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
UMT3F
2.0
0.32
0.9
(3)
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : WP
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RU1E002SP
Taping
TCL
3000
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
ï30
V
VGSS
ï±20
V
ID
ï±0.25
A
IDP *1
ï±0.5
A
PD *2
0.2
W
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 PWï£10ïs, Duty cycleï£1%
*2 Each terminal mounted on a reference land.
ï¬ Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
â1
â2
(1)
(2)
â1 BODY DIODE
â2 ESD PROTECTION DIODE
ï¬ Thermal resistance
Parameter
Channel to Ambient
*Each terminal mounted on a reference land.
Symbol
Rth (ch-a)*
Limits
625
Unit
ï°C / W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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