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RTU002P02 Datasheet, PDF (1/2 Pages) Rohm – 2.5V Drive Pch MOSFET | |||
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Product specification
RTU002P02
zStructure
TY P-channel MOS FET
zFeatures
1) Low On-resistance.
2) Low voltage drive (2.5V drive).
zApplications
Switching
zPackage specifications
Package
Type
Code
Basic ordering unit (pieces)
RTU002P02
Taping
T106
3000
zExternal dimensions (Unit : mm)
UMT3
2.0
0.3
(3)
0.9
0.2 0.7
(1) Source
(2) Gate
(3) Drain
(2)
(1)
0.65 0.65
1.3
0.15
Each lead has same dimensions
Abbreviated symbol : TW
zInner circuit
(3)
(2)
â2
â1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 Each terminal mounted on a recommended land
Symbol
VDSS
VGSS
ID
IDP â1
PD â2
Tch
Tstg
(1)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
Limits
Unit
â20
V
±12
V
±0.25
A
±0.5
A
0.2
W
150
°C
â55 to +150
°C
zThermal resistance
Parameter
Channel to ambient
â Each terminal mounted on a recommended land
Symbol
Rth(ch-a) â
Limits
625
Unit
°C/W
(1) Source
(2) Gate
(3) Drain
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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