RTR025P02TL Datasheet, PDF (1/2 Pages) Rohm – 2.5V Drive Pch MOS FET

Switching (−20V, −2.5A)
Product specification
RTR025P02
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT3).
zApplication
Power switching, DC / DC converter.
zStructure
TY P-channel
MOS FET
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
RTR025P02
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
−20
±12
±2.5
±10
−0.8
−3.2
1.0
150
−55 to +150
zExternal dimensions (Unit : mm)
TSMT3
2.9±0.1
0.4
+0.1
−0.05
Each
same
lead has
dimensions
(3)
1.0MAX.
0.85±0.1
0.7±0.1
0~0.1
(1)
0.95 0.95
1.9±0.2
(2)
0.16
+0.1
−0.06
Each lead has same dimensions
Abbreviated symbol : TY
zEquivalent circuit
(3)
Unit
V
V
A
A
A
A
W
°C
°C
(1)
∗2
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
Symbol
Rth (ch-A)
Limits
125
Unit
°C / W
http://www.twtysemi.com
[e-mail]
4008-318-123
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