RTR025N05 Datasheet, PDF (1/2 Pages) Rohm – 2.5V Drive Nch MOSFET

Product specification
RTR025N05
zStructure
TY N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
zApplication
Switching
zDimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
1.0MAX
0.85
0.7
(1) Gate
(2) Source
(3) Drain
(1) (2)
0.95 0.95
1.9
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : PW
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RTR025N05
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
45
V
Gate-source voltage
VGSS
±12
V
Continuous
ID
±2.5
A
Drain current
Pulsed
IDP ^∗1
±10
A
Source current
Continuous
IS
0.8
A
(Body diode)
Pulsed
ISP ^∗1
10
A
Total power dissipation
PD ^∗2
1.0
W
Channel temperature
Tch
150
°C
Range of Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
zInner circuit
(3)
∗2
(1)
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board
Symbol
Rth (ch-a) ^∗
Limits
125
Unit
°C / W
http://www.twtysemi.com
[e-mail]
4008-318-123
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