RSR020N06 Datasheet, PDF (1/3 Pages) Rohm – 4V Drive Nch MOS FET

V_DSS
R_DS(on) (Max.)
I_D
P_D
60V
170mW
2A
1.0W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
4) Pb-free lead plating ; RoHS compliant
lApplication
DC/DC converters
lAbsolute maximum ratings(T_a = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
Product specification
RSR020N06
lOutline
TSMT3
(3)
(1)
(2)
lInner circuit
(1) Gate
(2) Source
(3) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
3,000
TL
PZ
Symbol
V_DSS
I_D ^*1
I_D,pulse ^*2
V_GSS
P_D ^*3
P_D ^*4
T_j
T_stg
Value
60
2
8
20
1.0
0.54
150
-55 to +150
Unit
V
A
A
V
W
W
°C
°C
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