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| RSR010N10 Datasheet, PDF (1/2 Pages) Rohm – 4V Drive Nch MOSFET | |||
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4V Drive Nch MOSFET
Product specification
RSR010N10
ï¬ Structure
TY N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
TSMT3
(3)
(1)
(2)
Abbreviated symbol : ZJ
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSR010N10
Taping
TL
3000
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
100
V
VGSS
ï±20
V
ID
ï±1
A
IDP *1
ï±4
A
IS
0.8
A
ISP *1
4
A
PD *2
1
W
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Mounted on a ceramic board.
ï¬ Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
â1
â2
(1)
(2)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
ï¬ Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
125
Unit
ï°C / W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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