RSF010P05 Datasheet, PDF (1/2 Pages) Rohm – 4V Drive Pch MOSFET

Product specification
RSF010P05
 Structure
TY P-channel MOSFET
Features
1) Low On-resistance.
2) Small high power package.
3) Low voltage drive.(4V)
 Application
Switching
 Dimensions (Unit : mm)
TUMT3
Abbreviated symbol : SU
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSF010P05
Taping
TL
3000

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
V_DSS
45
V
V_GSS
20
V
I_D
1
A
I_DP ^*1
4
A
I_S
0.6
A
I_SP ^*1
4
A
P_D ^*2
0.8
W
Tch
150
C
Range of storage temperature
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
∗1
∗2
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
 Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)^*
Limits
156
Unit
C / W
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