RRR015P03 Datasheet, PDF (1/2 Pages) Rohm – 4V Drive Pch MOSFET

Product specification
RRR015P03
 Structure
TY P-channel MOSFET
 Dimensions (Unit : mm)
TSMT3
Features
1) Low On-resistance.
2) High power package.
3) 4V drive.
(3)
(1)
(2)
 Application
Switching
 Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRR015P03
 Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Abbreviated symbol : UJ
Taping
TL
3000

 Inner circuit
(3)
(1)
(1) Gate
(2) Source
(3) Drain
∗2
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Symbol
Limits
Unit
V_DSS
30
V
V_GSS
20
V
I_D
1.5
A
I_DP ^*1
6
A
I_S
0.8
A
I_SP ^*1
6
A
P_D ^*2
1.0
W
Tch
150
C
Tstg
55 to +150
C
 Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)^*
Limits
125
Unit
C / W
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2