RQJ0304DQDQA Datasheet, PDF (1/2 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

Product specification
RQJ0304DQDQA
Features
• Low gate drive
V_DSS : –30 V and 2.5 V gate drive
• Low drive current
• High speed switching
• Small traditional package (MPAK)
Outline
(Package name: MPAK)
3
1
2
Notes: Marking is "DQ".
3
D
2
G
S
1
1. Source
2. Gate
3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
I_DR
Pch ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
Ratings
–30
+8 / –12
–1.8
–8
1.8
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
http://www.twtysemi.com
[e-mail]
4008-318-123
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