RB751V-40_1 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 0.03A Surface Mount Schottky Barrier Diode

Product specification
SOD-323 Plastic-Encapsulate Diodes
RB751V -40 Schottky Barrier Diode
FEATURES
z Low current rectifier schottky diode
z Low voltage, low inductance
z For power supply
MAKING: 5
SOD-323
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Peak reverse voltage
V_RM
DC reverse voltage
V_R
Mean rectifying current
I_O
Peak forward surge current
I_FSM
Power dissipation
P_D
Thermal Resistance Junction to Ambient
R_θJA
Junction temperature
T_j
Storage temperature
T_stg
Limit
40
30
0.03
0.2
200
500
125
-55~+150
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min Typ
V_F
I_R
C_T
2
Max Unit
0.37 V
0.5 μA
pF
Unit
V
V
A
A
mW
℃/W
℃
℃
Conditions
I_F=1mA
V_R=30V
V_R=1V, f=1MHZ
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