QS6M4 Datasheet, PDF (1/3 Pages) Rohm – Small switching

Small switching
QS6M4
Product specification
QS6M4
zFeatures
1) The QS6M4 combines Pch Trench MOSFET with a
Nch Trench MOSFET in a single TSMT6 package.
2) Pch Trench MOSFET and Nch Trench MOSFET
have a low on-state resistance with a fast switching.
3) Pch Trench MOSFET is neucted a low voltage drive
(2.5V).
zApplications
Load switch, inverter
zExternal dimensions (Unit : mm)
TSMT6
2.8
1pin mark
1.6
Each lead has same dimensions
Abbreviated symbol : M04
zStructure
TY P-channel MOS FET
TY N-channel MOS FET
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6M4
Taping
TR
3000
zEquivalent circuit
(6)
(5)
(4)
∗1
∗2
∗2
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗ Pw≤10µs, Duty cycle≤1%
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
Nchannel Pchannel
30
−20
12
−12
±1.5
±1.5
±6.0
±6.0
0.8
−0.75
6.0
−6.0
1.25
150
−55 to +150
Unit
V
V
A
A^∗
A
A^∗
W
°C
°C
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
Symbol
Rth (ch-a)
Limits
100
Unit
°C / W
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