PZTA94 Datasheet, PDF (1/1 Pages) Weitron Technology – High-Voltage PNP Transistor Surface Mount

Product specification
SOT-223 Plastic-Encapsulate Transistors
PZTA94 TRANSISTOR (PNP)
FEATURES
 High Voltage Driver Applications
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-400
V_CEO
Collector-Emitter Voltage
-400
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current -Continuous
-0.2
I_CM
Collector Current- Pulsed
-0.3
P_C
Collector Power Dissipation
1
R_θJA
Thermal Resistance from Junction to Ambient
125
T_J
Junction Temperature
150
T_stg
Storage Temperature
-55~150
Unit
V
V
V
A
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=-0.1mA,IE=0
-400
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0
-400
V
Emitter-base breakdown voltage
V(BR)EBO IE=-0.1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-400V,IE=0
-100 nA
Collector cut-off current
ICEO
VCE=-400V,IB=0
-5
μA
Emitter cut-off current
IEBO
VEB=-4V, IC=0
-100 nA
hFE(1) VCE=-10V, IC=-10mA
80
300
DC current gain
hFE(2) VCE=-10V, IC=-1mA
70
hFE(3) VCE=-10V, IC=-100mA
60
hFE(4) VCE=-10V, IC=-50mA
80
Collector-emitter saturation voltage
VCE(sat)
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
-0.2
V
-0.3
V
Base-emitter saturation voltage
VBE(sat) IC=-10mA,IB=-1mA
-0.75
V
Transition frequency
fT
VCE=-20V,IC=-10mA, f=30MHz
50
MHz
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