PZTA92 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP high-voltage transistor

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Product specification
PZTA92
■ Features
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary to PZTA42(NPN)
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
3.00+0.1
-0.1
4
1
2
3
2.9
4.6
0.70+0.1
-0.1
0.90+0.2
-0.2
7.00+0.3
-0.3
1 Base
2 Collector
3 Emitter
4 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
-300
V
VCEO
-300
V
VEBO
-5.0
V
IC
-300
mA
PC
1
W
Tj
150
℃
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Collector cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
■ Marking
Marking
A92
Symbol
Test conditions
V(BR)CBO Ic= 100 μA， IE=0
V(BR)CEO Ic= 1 mA， IB=0
V(BR)EBO IE= 100 μA， IC=0
IcBO VCB= -200 V , IE=0
IEBO VCE= -3.0V , IC=0
VCE= -10V, IC= -1.0mA
hFE VCE= -10V, IC= -10mA
VCE= -10V, IC= -30mA
VCE(sat) IC=-20 mA, IB= -2.0mA
VBE(sat) IC=-20 mA, IB= -2.0mA
fT VCE= -20V, IC= -10mA,f=100MHz
Cob VCB=-20V,f=1.0MHz,IE=0
Min Typ Max Unit
-300
V
-300
V
-5.0
V
-0.25 μA
-0.1 μA
25
40
25
-0.5 V
-0.9 V
50
MHz
6.0 pF
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