PZTA56 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP general purpose transistor

Product specification
PZTA56
■ Features
● Power dissipation：PC=1W
● Collector current (DC)：IC=500mA
● Complementary NPN Type Available (PZTA06)
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
3.00+0.1
-0.1
4
1
2
3
2.9
4.6
0.70+0.1
-0.1
0.90+0.2
-0.2
7.00+0.3
-0.3
1 Base
2 Collector
3 Emitter
4 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
Rating
-80
-80
-4.0
-500
1
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-Emitter On Voltage
Transition frequency
Symbol
Test conditons
V(BR)CBO Ic= -100 μA,IE=0
V(BR)CEO Ic= -1 mA， IB=0
V(BR)EBO IE= -100 μA， IC=0
IcBO VCB= -80 V , IE=0
IEBO VCE= -4V , IC=0
VCE= -1.0V, IC= -10mA
hFE
VCE= -10V, IC= -100mA
VCE(sat) IC=-100 mA, IB= -10mA
VBE(on) IC=-100 mA, VCE=-1.0V
fT VCE= -1.0V, IC= -100mA,f=100MHz
■ Marking
Marking
A56
Unit
V
V
V
mA
W
℃
℃
Min Typ Max Unit
-80
V
-80
V
-4.0
V
-100 nA
-100 nA
100
100
-0.25 V
-1.2 V
50
MHz
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1