PZTA42 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN high-voltage transistor

SMD Type
Transistors
Product specification
PZTA42
■ Features
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary to PZTA92(PNP)
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
3.00+0.1
-0.1
4
1
2
3
2.9
4.6
0.70+0.1
-0.1
0.90+0.2
-0.2
7.00+0.3
-0.3
1 Base
2 Collector
3 Emitter
4 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
300
300
6
500
1
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output Capacitance
Transition frequency
■ Marking
Marking
A42
Symbol
Test conditions
V(BR)CBO Ic= 100 μA， IE=0
V(BR)CEO Ic= 1 mA， IB=0
V(BR)EBO IE= 100 μA， IC=0
IcBO VCB= 200 V , IE=0
IEBO VEB= 6V , IC=0
VCE= 10V, IC= 1mA
hFE VCE= 10V, IC= 10mA
VCE= 10V, IC= 30mA
VCE(sat) IC=20 mA, IB= 2mA
VBE(sat) IC= 20 mA, IB= 2mA
Cob VCB = 20V, f = 1.0MHz, IE = 0
fT VCE= 20V, IC= 10mA,f=100MHz
Unit
V
V
V
mA
W
℃
℃
Min Typ Max Unit
300
V
300
V
6
V
0.1 μA
0.1 μA
25
40
40
0.5 V
0.9 V
3.0 pF
50
MHz
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