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| PZTA14 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN Darlington transistor | |||
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Product specification
SOT-223 Plastic-Encapsulate Transistors
PZTA14 TRANSISTOR (NPN)
SOT-223
FEATURES
z High current (max. 500 mA)
z Low voltage (max. 30 V).
z Pre-amplifiers requiring high input impedance.
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol Test conditions
V(BR)CBO Ic=100μA,IE=0
VCE(SUS) Ic=100uA,IB=0
V(BR)EBO IE=100μA,IC=0
ICBO
VCB=30V,IE=0
ICEO
VEB=10V,IC=0
hFE(1) VCE=5.0V,IC=10mA
hFE(2) VCE=5.0V,IC=100mA
VCE(sat) IC=100mA,IB=0.1mA
VBE
VCE=5V,Ic=100mA
fT
VCE=5V,IC=10mA,f=100MHz
Value
30
30
10
500
1
150
-65~150
Min Typ
30
30
10
10000
20000
125
Unit
V
V
V
mA
W
â
â
Max Unit
V
V
V
0.1
μA
0.1
μA
1.5
V
2
V
MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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