PZT3906 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP switching transistor

■ Features
● Collector Power Dissipation: PC=1W
● Collector Current: IC= -200mA
● Complementary NPN Type Available(PZT3904)
Product specification
PZT3906
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
3.00+0.1
-0.1
4
1
2
3
2.9
4.6
0.70+0.1
-0.1
0.90+0.2
-0.2
7.00+0.3
-0.3
1 Base
2 Collector
3 Emitter
4 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector- Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current- Continuous
Power Dissipation
Junction and Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Rating
-40
-40
-5
-200
1
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector - base breakdown voltage
Collector - emitter breakdown voltage
Emitter- base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector- emitter saturation voltage
Base - emitter saturation voltage
Delay time
Rise time
Storage time
Fall time
Transition frequency
Symbol
Test conditons
V(BR)CBO Ic= -10 μA， IE=0
V(BR)CEO Ic= -1 mA， IB=0
V(BR)EBO IE= -10 μA， IC=0
ICBO VCB=-30V,IE=0
IEBO VEB=-5V,IC=0
VCE= -1V, IC= -10mA
hFE
VCE= -1V, IC= -50mA
VCE(sat) IC=-50 mA, IB= -5mA
VBE(sat) IC=-50 mA, IB= -5mA
td VCC=-3.0V,VBE=0.5V
tr IC=-10mA,IB1=-1.0mA
ts VCC=-3.0V,IC=-10mA
tf IB1=IB2=-1.0mA
fT VCE= -20V, IC= -10mA, f=100MHz
■ Marking
Marking
3906
Unit
V
V
V
mA
W
℃
Min Typ Max Unit
-40
V
-40
V
-5
V
-0.1 μA
-0.1 μA
100
300
60
-0.4 V
-0.95 V
35
ns
35
225
ns
75
250
MHz
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1