PZT3904 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN switching transistor

Product specification
PZT3904
■ Features
● Collector Power Dissipation: PC=1W
● Collector Current: IC= 200mA
● Complementary PNP Type Available(PZT3906)
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50^+0.2
-0.2
3.00+0.1
-0.1
4
1
2
3
2.9
4.6
0.70+0.1
-0.1
0.90+0.2
-0.2
7.00+0.3
-0.3
1 Base
2 Collector
3 Emitter
4 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
60
40
6
200
1
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collecto- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base - emitter saturation voltage
Delay time
Rise time
Storage time
Fall time
Transition frequency
■ Marking
Marking
3904
Symbol
Test conditons
VCBO Ic= 10 μA， IE=0
VCEO Ic= 1 mA， IB=0
VEBO IE= 10μA， IC=0
IcBO VCB= 60 V , IE=0
IcEO VCE= 30 V , VBE(off)=3V
IEBO VEB= 5V , IC=0
VCE= 1V, IC= 10mA
hFE
VCE= 1V, IC= 50mA
VCE(sat) IC=50 mA, IB= 5mA
VBE(sat) IC= 50 mA, IB= 5mA
td VCC=3.0V,VBE=-0.5V
tr IC=10mA,IB1=-IB2=1.0mA
ts VCC=3.0V,IC=10mA
tf IB1=-IB2=1.0mA
fT VCE= 20V, IC= 10mA,f=100MHz
Unit
V
V
V
mA
W
℃
℃
Min Typ Max Unit
60
V
40
V
6
V
0.1 μA
50 nA
0.1 μA
100
300
60
0.4 V
0.95 V
35
ns
35
200
ns
50
300
MHz
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