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| PZT2907A Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP switching transistor | |||
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Product specification
PZT2907A
â Features
â Power Collector dissipation: PC=1W
â Continuous Collector Current: IC=-600mA
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50+0.2
-0.2
3.00+0.1
-0.1
4
1
2
3
2.9
4.6
0.70+0.1
-0.1
0.90+0.2
-0.2
7.00+0.3
-0.3
1 Base
2 Collector
3 Emitter
4 Collector
â Absolute Maximum Ratings Ta = 25â
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous Collector Current
Peak collector current
Power Collector dissipation
Operating and storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
Tj,Tstg
Rating
-60
-60
-5
-600
-800
1
-55 to +150
â Electrical Characteristics Ta = 25â
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
DC current gain
Transition frequecy
Output capacitance
* Pulse test: tp ⤠300 μs; d ⤠0.02.
â Marking
Marking
2907A
Symbol
Test conditons
V(BR)CBO IC=-10μA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-10μA
ICBO VCB=-50V, IE=0
IEBO VEB=-5V, IC=0
VCE(sat) IC=-500mA,IB=-50mA
VBE(sat) IC=-500mA,IB=-50mA
VBE(ON) IC=-1A,VCE=-5V
IC=-1mA, VCE=-5V*
IC=-100mA,VCE=-5V
hFE
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
fT IC=-50mA,VCE=-20V,f=100MHz
Cob VCB=-10V,IE = 0,f=1MHz
Unit
V
V
V
mA
mA
W
â
Min Typ Max Unit
-60
V
-60
V
-5
V
-10 nA
-50 nA
-1.6 V
-2.6 V
-1.0 V
300
300
800
250
160
200
MHz
8 pF
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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