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PMV65XP Datasheet, PDF (1/4 Pages) NXP Semiconductors – P-channel TrenchMOS extremely low level FET | |||
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PMV65XP
20 V, single P-channel Trench MOSFET
12 February 2013
Product specification
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
⢠Low threshold voltage
⢠Low on-state resistance
⢠Trench MOSFET technology
3. Applications
⢠Low power DC-to-DC converters
⢠Load switching
⢠Battery management
⢠Battery powered portable equipment
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tsp = 25 °C
VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C
Min Typ Max Unit
-
-
-20 V
-12 -
12
V
-
-
-4.3 A
-
58
74
mΩ
http://www.twtysemi.com
sales@twtysemi.com
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