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PMV48XP Datasheet, PDF (1/4 Pages) NXP Semiconductors – 20 v, 3.5A P-channel Trench MOSFET | |||
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PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
Rev. 1 â 21 December 2010
Product specification
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
 Logic-level compatible
 Trench MOSFET technology
 Very fast switching
1.3 Applications
 High-side loadswitch
 High-speed line driver
 Relay driver
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source
Tamb = 25 °C
voltage
-
-
-20 V
VGS
gate-source
voltage
-12 -
12 V
ID
drain current
Static characteristics
VGS = -4.5 V; Tamb = 25 °C
[1]
-
-
-3.5 A
RDSon
drain-source
on-state
resistance
VGS = -4.5 V; ID = -2.4 A;
pulsed; tp ⤠300 µs; δ ⤠0.01;
Tj = 25 °C
-
48 55 mâ¦
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
http://www.twtysemi.com
sales@twtysemi.com
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