PMV32UP Datasheet, PDF (1/4 Pages) NXP Semiconductors – 20 V, 4 A P-channel Trench MOSFET

PMV32UP
20 V, 4 A P-channel Trench MOSFET
Rev. 1 — 11 March 2011
Product specification
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 1.8 V drain-source on-state resistance
rated
 Very fast switching
 Trench MOSFET technology
1.3 Applications
 Relay driver
 High-speed line driver
 High-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_j = 25 °C
voltage
V_GS
gate-source
voltage
I_D
drain current
Static characteristics
V_GS = -4.5 V; T_amb = 25 °C
R_DSon
drain-source
on-state
resistance
V_GS = -4.5 V; I_D = -2.4 A;
T_j = 25 °C
Min Typ Max Unit
-
-
-20 V
-8 -
8
V
[1]
-
-
-4 A
-
32 36 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
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