PMV31XN Datasheet, PDF (1/3 Pages) NXP Semiconductors – UTrenchMOS extremely low level FET

PMV31XN
N-channel TrenchMOS FET
Rev. 2 — 30 November 2011
Product specification
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
 Very fast switching
 Low threshold voltage
 Trench MOSFET technology
1.3 Applications
 Battery-powered motor control
 High-speed switching in set top box
power supplies
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
Quick reference data
Parameter
drain-source voltage
drain current
P_tot
total power dissipation
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j ≥ 25 °C; T_j ≤ 150 °C
T_sp = 25 °C; V_GS = 4.5 V; see Figure 2;
see Figure 3
T_sp = 25 °C; see Figure 1
V_GS = 2.5 V; I_D = 1 A; T_j = 25 °C; see
Figure 9; see Figure 10
V_GS = 4.5 V; I_D = 1.5 A; T_j = 25 °C; see
Figure 9; see Figure 10
Min Typ Max Unit
-
-
20 V
-
-
5.9 A
-
-
2
W
-
44
53
mΩ
-
31
37
mΩ
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