PMBT2222 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN switching transistors

Product specification
PMBT2222; PMBT2222A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complements: PMBT2907 and PMBT2907A.
MARKING
TYPE NUMBER
PMBT2222
PMBT2222A
MARKING CODE⁽¹⁾
∗1B
∗1P
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
1
Top view
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
PMBT2222
PMBT2222A
collector-emitter voltage
PMBT2222
PMBT2222A
emitter-base voltage
PMBT2222
PMBT2222A
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
60
V
−
75
V
−
30
V
−
40
V
−
5
V
−
6
V
−
600
mA
−
800
mA
−
200
mA
−
250
mW
−65
+150
°C
−
150
°C
−65
+150
°C
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