PMBD6050 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diode

Product specification
PMBD6050
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 70 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
• High-speed switching in thick and
thin-film circuits.
DESCRIPTION
The PMBD6050 is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
small SOT23 plastic SMD package.
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
handbook, halfpa2ge
1
2
n.c.
3
1
3
MAM185
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_RRM
V_R
I_F
I_FRM
I_FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
CONDITIONS
note 1; see Fig.2
square wave; T_j = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
T_amb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
MAX.
85
70
215
500
UNIT
V
V
mA
mA
−
4
A
−
1
A
−
0.5
A
−
250
mW
−65
+150 °C
−
150
°C
http://www.twtysemi.com
[e-mail]
4008-318-123
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