PJA55P03 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – 30V P-CHANNEL ENHANCEMENT MODE MOSFET

Product specification
PJA55P03
30V P-CHANNEL ENHANCEMENT MODE MOSFET
VOLTAGE ^{30 Volts} CURRENT ^{4.3 Amperes}
FEATURES
• R_DS(ON), V_GS@-10V,I_D@-4.3A < 48 mΩ
• R_DS(ON), V_GS@-4.5V,I_D@-3.5A < 55 mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Low Voltage Application
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: SOT-23-1 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight : 0.0003 ounces, 0.0084grams
• Marking : 55
0.119(3.02)
0.111(2.82)
0.067(1.70)
0.059(1.50)
0.079(2.00)
0.071(1.80)
0.004(0.10)MAX.
0.020(0.50)
0.012(0.30)
o
0~8
0.008(0.20)
0.004(0.10)
0.049(1.25)
0.041(1.05)
0.045(1.15)
0.041(1.05)
MAXIMUM RATINGS AND THERMAL Characteristics (T_A=25^OC unless otherwise noted )
PAR AME T E R
S YMB OL
Drain-Source Voltage
V _DS
Gate-Source Voltage
V _GS
Continuous Drain Current
Steady-State T_A=25^OC
I_D
Pulsed Drain Current
I_DM
Power Dissipation (Notes 1)
Steady-State T_A=25^OC
P_D
Typ i ca l The rma l Resi sta nce (Notes 1)
R_θJA
Op e r a ti ng J unc ti o n Te mp e ra tur e a nd S to ra g e Te mp e ra ture Ra ng e T_J,T_STG
LIMIT
-30
+12
-4.3
-20
1.25
120
-55 to + 150
NOTES:
1. Mounted on 48cm² FR-4 PCB .
UNITS
V
V
A
A
W
O_{C /W}
O_C
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