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PJ2306 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – 30V N-Channel Enhancement Mode MOSFET - ESD Protected | |||
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30V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
⢠RDS(ON), VGS@10V,IDS@3.2A=65mâ¦
⢠RDS(ON), VGS@4.5V,IDS@2.8A=85mâ¦
⢠Advanced Trench Process Technology
⢠High Density Cell Design For Ultra Low On-Resistance
⢠Very Low Leakage Current In Off Condition
⢠Specially Designed for Load Switch, PWM Applications
⢠ESD Protected
⢠Component are in compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
⢠Case: SOT-23 Package
⢠Terminals : Solderable per MIL-STD-750,Method 2026
⢠Marking : 06
Product specification
PJ2306
D
3
1
2
G
S
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R
S ym b o l
Limit
Drain-Source Voltage
V DS
30
Gate-Source Voltage
V GS
+20
Continuous Drain Current
ID
3.2
Pulsed Drain Current 1)
Maxi mum P ower Di ssi pati on
TA = 2 5 OC
TA = 7 5 OC
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
IDM
PD
T J , T S TG
16
1.25
0.75
-55 to + 150
Junction-to Ambient Thermal Resistance(PCB mounted)2
R θJ A
100
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
Uni ts
V
V
A
A
W
OC
OC /W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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