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| PH2369 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN switching transistor | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
PH2369 TRANSISTOR (NPN)
FEATURES
Power Dissipation
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
4.5
V
IC
Collector Current âContinuous
0.2
A
PC
Collector Power Dissipation
500
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
TO-92
1. COLLECTOR
2. BASE
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector capacitance
Emitter capacitance
Turn-on time
Turn-off time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cc
Ce
ton
toff
Test conditions
IC= 100μA, IE=0
IC= 10mA, IB=0
IE= 10μA, IC=0
VCB= 20V, IE=0
VEB= 4V, IC=0
VCE= 1V, IC= 10mA
VCE= 2V, IC= 100mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE= 10V, IC=10mA
f =100MHz
VCB=5V,IE=0,f=1MHz
VEB=1V,IE=0,f=1MHz
VCC=3V, IC=10mA ,
IB1= 3mA
Min Typ
40
15
4.5
40
20
0.7
500
Max Unit
V
V
V
0.4
μA
0.1
μA
120
0.25
V
0.85
V
MHz
4
pF
4.5
pF
10
nS
20
nS
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