NDS0605 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – P-Channel Enhancement Mode Field Effect Transistor

SMD Type
Product specification
NDS0605
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been designed to minimize on-state resistance, provide rugged
and reliable performance and fast switching. They can be
used, with a minimum of effort, in most applications requiring
up to 0.18A DC and can deliver pulsed currents up to 1A. This
product is particularly suited to low voltage applications
requiring a low current high side switch.
Features
-0.18A, -60V. R_DS(ON) = 5Ω @ V_GS = -10V.
Voltage controlled p-channel small signal switch.
High density cell design for low R_DS(ON) .
High saturation current.
___________________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
T_A = 25°C unless otherwise noted
V_DSS
Drain-Source Voltage
V_DGR
Drain-Gate Voltage (R_GS < 1 MΩ)
V_GSS
Gate-Source Voltage - Continuous
I_D
Drain Current - Continuous
- Pulsed
P_D
Maximum Power Dissipation T_A = 25°C
Derate above 25°C
T_J,T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/16" from case for 10 seconds
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient
NDS0605
-60
-60
±20
-0.18
-1
0.36
2.9
-55 to 150
300
350
Units
V
V
V
A
W
mW/^oC
°C
°C
°C/W
http://www.twtysemi.com
[e-mail]
4008-318-123
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