NCE8205 Datasheet, PDF (1/2 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

Product specification
SOT-23-6L Plastic-Encapsulate MOSFETS
NCE8205 Dual N-Channel MOSFET
FEATURE
z TrenchFET Power MOSFET
z Excellent R_DS(on)
z Low Gate Charge
z High Power and Current Handing Capability
z Surface Mount Package
APPLICATION
z Battery Protection
z Load Switch
z Power Management
MARKING
SOT-23-6L
G1
D1,D2
G2
6
5
4
1
2
3
S1
D1,D2
S2
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
V_DS
V_GS
I_D
I_DM
R_θJA
T_J
T_STG
T_L
Value
19
±10
6
25
357
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
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4008-318-123
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