MUR820CTR Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 8 Ampere Heatsink Dual Common Anode Fast Recovery Half Bridge Rectifiers

MUR820CTR thru MUR860CTR
®
MUR820CTR thru MUR860CTR
Pb
Pb Free Plating Product
8.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifier Diode
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
Mechanical Data
¬ Case:TO-220AB Heatsink
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity:As marked on diode body
¬ Mounting position: Any
¬ Weight: 2.1 gram approximately
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Case
Case
Positive
Negative
Common Cathode Common Anode
Doubler
Suffix "CT"
Suffix "CTR" ^{Suffix "CTD"}
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
MUR820CT
MUR820CTR
MUR820CTD
200
Maximum RMS Voltage
VRMS
140
Maximum DC Blocking Voltage
VDC
200
Maximum Average Forward Rectified
Current TC=100^oC
IF(AV)
MUR840CT
MUR840CTR
MUR840CTD
400
280
400
8.0
MUR860CT
MUR860CTR ^UNIT
MUR860CTD
600
V
420
V
600
V
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
100
A
Maximum Instantaneous Forward Voltage
VF
0.98
@ 5.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.3
10.0
250
35
65
2.2
-55 to +150
1.7
V
uA
uA
nS
pF
o_CW
o_C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
© 2006 Thinki Semiconductor Co.,Ltd.
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