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MPS8550S Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)
HIGH CURRENT APPLICATION.
FEATURE
Complementary to MPS8050S.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
VCBO
-40
VCEO
-25
VEBO
-6
IC
-1.5
PC *
350
Tj
150
Storage Temperature Range
Tstg
-55 150
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
UNIT
V
V
V
A
mW
Product specification
MPS8550S
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
hFE Rank
BJ Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=-35V, IE=0
Emitter Cut-off Current
IEBO
VEB=-6V, IC=0
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-100 A, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-2mA, IB=0
hFE(1)
VCE=-1V, IC=-5mA
DC Current Gain
hFE(2) (Note) VCE=-1V, IC=-100mA
hFE(3)
VCE=-1V, IC=-800mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-800mA, IB=-80mA
Base-Emitter Saturation Voltage
VBE(sat)
IC=-800mA, IB=-80mA
Base-Emitter Voltage
VBE
VCE=-1V, IC=-10mA
Transition Frequency
fT
VCE=-10V, IC=-50mA
Collector Output Capacitance
Cob
VCB=-10V, f=1MHz, IE=0
Note : hFE(2) Classification B:85 160 , C : 120 200 , D : 160 300
MIN.
-
-
-40
-25
45
85
40
-
-
-
100
-
TYP.
-
-
-
-
170
160
80
-0.28
-0.98
-0.66
200
15
MAX.
-100
-100
-
-
-
300
-
-0.5
-1.2
-1.0
-
-
UNIT
nA
nA
V
V
V
V
V
MHz
pF
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