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| MPS750 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
MPS750 TRANSISTOR (PNP)
FEATURES
z General Purpose Amplifier
TO â 92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-40
-5
-2
625
200
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO*
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
hFE(1)*
hFE(2) *
hFE(3) *
hFE(4) *
VCE(sat) (1) *
VCE(sat) (2) *
VBE(sat) *
VBE*
Transition frequency
fT
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
Test conditions
IC= -0.1mA,IE=0
IC=-10mA,IB=0
IE=-0.01mA,IC=0
VCB=-60V,IE=0
VEB=-4V,IC=0
VCE=-2V, IC=-50mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-2V, IC=-2A
IC=-2A,IB=-200mA
IC=-1A,IB=-100mA
IC=-1A,IB=-100mA
IC=-1A, VCE=-2V
VCE=-5V,IC=-50mA,f=100MHz
Min Typ Max Unit
-60
V
-40
V
-5
V
-0.1 μA
-0.1 μA
75
75
400
75
40
-0.5 V
-0.3 V
-1.2 V
-1.0 V
75
MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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