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| MPS651 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAMP DRIVER, INDUSTRIAL USE) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
MPS651 TRANSISTOR (NPN)
FEATURES
z General Purpose Amplifier
TO â 92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
80
60
5
2
625
200
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter
breakdown
V(BR)CBO
V(BR)CEO*
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
IEBO
hFE(1)*
hFE(2) *
hFE(3) *
hFE(4) *
VCE(sat) (1) *
VCE(sat) (2) *
VBE(sat) *
VBE*
Transition frequency
fT
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
Test conditions
IC= 0.1mA,IE=0
IC=10mA,IB=0
IE=0.01mA,IC=0
VCB=80V,IE=0
VEB=4V,IC=0
VCE=2V, IC=50mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=2A
IC=2A,IB=200mA
IC=1A,IB=100mA
IC=1A,IB=100mA
IC=1A, VCE=2V
VCE=5V,IC=50mA,f=100MHz
Min Typ Max Unit
80
V
60
V
5
V
0.1 μA
0.1 μA
75
75
75
40
0.5 V
0.3 V
1.2 V
1
V
75
MHz
A,Dec,2010
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