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| MPS2907A Datasheet, PDF (1/2 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR) | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
MPS2907A TRANSISTOR (PNP)
FEATURES
Complementary NPN Type available (MPS2222A)
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol ParDPHWHU
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
Value
Unit
-60
V
-60
V
-5
V
-0.6
A
0.625
W
150
â
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
CLASSIFICATION OF hFE(2)
Rank
Range
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
td
tr
tS
tf
T est conditions
IC=-10μA,IE=0
IC=-10mA,IB=0
IE=-10μA,IC=0
VCB=-50V,IE=0
VCE=-30V,VEB(off)=-0.5V
VEB=-3V,IC=0
VCE=-10V,IC=-0.1mA
VCE=-10V,IC=-150mA
VCE=-10V,IC=-500mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-20V,IC=-50mA,f=100MHz
VCC=-30V,Ic=-150mA,
IB1=-IB2=-15mA
VCC=-6V,Ic=-150mA,
IB1=-IB2=-15mA
L
100-200
Min Typ Max
Unit
-60
V
-60
V
-5
V
-10
nA
-50
nA
-10
nA
78
100
300
52
-0.4
V
-0.67
V
-1
V
-1.2
V
200
MHz
10
ns
25
ns
225
ns
60
ns
H
200-300
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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