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| MPS2222A Datasheet, PDF (1/2 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR(GENERAL PURPOSE TRANSISTOR) | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
MPS2222A TRANSISTOR (NPN )
TO-92
FEATURE
Complementary NPN Type available (MPS2907A)
1. EMITTER
2. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
3. COLLECTOR
Symbol
Parameter
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current -Continuous
PC Collector Power Dissipation
TJ
Junction Temperature
Tstg Storage Temperature
Value
75
40
6
600
625
150
-55-150
Unit
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Delay time
Rise time
Storage time
Fall time
Transition frequency
*pulse test
CLASSIFICATION OF hFE(1)
Rank
Range
Symbol
Test conditions
Min
V(BR)CBO
IC= 10uA , IE=0
75
V(BR)CEO
IC= 10mA , IB=0
40
V(BR)EBO
IE= 10uA, IC=0
6
ICBO
VCB= 60V, IE=0
ICEX
VCE= 60V,VEB(Off)=3V
IEBO
VEB= 3 V, IC=0
hFE(1)
VCE=10V,IC= 150mA
100
hFE(2)
VCE=10V,IC= 0.1mA
40
hFE(3)*
VCE=10V, IC= 500mA
42
VCE(sat)(1) * IC= 500mA, IB=50mA
VCE(sat)(2) * IC= 150mA, IB=15mA
VBE(sat) *
IC= 500mA, IB= 50mA
td
VCC=30V, VEB(Off)=-0.5V,
tr
IC=150mA,IB1=15mA
tS
VCC=30V,Ic=150mA,IB1=IB2=15mA
tf
fT
VCE=20V, IC=20mA, f=100MHz
300
L
100-200
H
200-300
Max Unit
V
V
V
10
nA
10
nA
100 nA
300
0.6
V
0.3
V
1.2
V
10
nS
25
nS
225 nS
60
nS
MHz
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sales@twtysemi.com
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