MMSTA63 Datasheet, PDF (1/3 Pages) Diodes Incorporated – PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

SMD Type
Features
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
High Current Gain
Transistors
Product specification
MMSTA63
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Pd
R JA
Tj, TSTG
Rating
-30
-30
-10
-500
200
625
-55 to +150
Unit
V
V
V
mA
mW
/W
Electrical Characteristics Ta = 25
Parameter
Collector-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Symbol
Testconditons
VCBO IC = 100 A, IE = 0
ICBO VCB = -30V, IE = 0
IEBO VCE = -10V, IC = 0
IC = -10mA, VCE = -5V
hFE
IC = -100mA, VCE =5V
VCE(sat) IC = -100mA, IB = -100 A
VBE(sat) IC = -100mA,VCE=-5.0V
fT VCE = -5.0V, IC =-10mA,f = 100MHz
Min Typ
-30
5,000
10,000
125
Max Unit
V
-100 nA
-100 nA
-1.5 V
-2.0 V
MHz
Marking
Marking
K2E
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