MMSTA56 Datasheet, PDF (1/1 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(PNP)

Product specification
SOT-323 Plastic-Encapsulate Transistors
MMSTA56 TRANSISTOR (PNP)
FEATURES
 Small Surface Mount Package
 General Poupose for Amplification
MARKING:K2G
SOT–323
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-80
VCEO Collector-Emitter Voltage
-80
VEBO Emitter-Base Voltage
-4
IC
Collector Current
-500
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
-80
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0
-80
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA, IC=0
-4
V
Collector cut-off current
ICBO
VCB=-80V, IE=0
-100
nA
Emitter cut-off current
IEBO
VEB=-4V, IC=0
-0.5
nA
DC current gain
VCE=-1V, IC=-10mA
50
hFE
VCE=-1V, IC=-100mA
50
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB=-10mA
-0.25
V
Base-emitter voltage
VBE
VCE=-1V, IC=-100mA
-1.2
V
Transition frequency
fT
VCE=-1V,IE=-100mA , f=100MHz
50
MHz
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