MMSTA13 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

SMD Type
Transistors
Product specification
MMSTA13
Features
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
High Current Gain
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Pd
R JA
Tj, TSTG
Rating
30
30
10
300
200
625
-55 to +150
Unit
V
V
V
mA
mW
/W
Electrical Characteristics Ta = 25
Parameter
Collector-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Symbol
Testconditons
VCBO IC = 100 A, IE = 0
ICBO VCB = 30V, IE = 0
IEBO VCE = 10V, IC = 0
IC = 10mA, VCE = 5V
hFE
IC = 100mA, VCE =5V
VCE(sat) IC = 100mA, IB = 100 A
VBE(sat) IC = 100mA,VCE=5.0V
Cobo VCB = 10V, f = 1.0MHz, IE = 0
Cibo VEB = 0.5V, f = 1.0MHz, IC = 0
fT VCE = 5.0V, IC =10mA,f = 100MHz
Min Typ
30
5,000
10,000
8.1
15
125
Max Unit
V
100 nA
100 nA
1.5 V
2.0 V
pF
pF
MHz
Marking
Marking
K2D
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