MMST5551 Datasheet, PDF (1/1 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

■ Features
● Ultra-Small Surface Mount Package
● Ideal for Medium Power Amplification and Switching
● Complementary PNP Type Available (MMST5401)
Product specification
MMST5551
SOT-323
1.3±0.1
0.65
12
Unit:mm
3
0.3±0.1
2.1±0.1
0.1
+0.05
-0.02
1 Emitter
2 Base
3 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Collector Power Dissipation
Junction and storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
TJ, Tstg
Rating
180
160
6
0.6
200
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC = 100 μA, IE = 0
Collector-emitter breakdown voltage *
V(BR)CEO IC = 1.0 mA, IB = 0
Emitter-base breakdown voltage
V(BR)EBO IE = 10 μA, IC = 0
Collector cutoff current
ICBO VCB = 120 V, IE = 0
Emitter cutoff current
IEBO VEB = 4.0 V, IC = 0
IC = 1.0 mA, VCE = 5 V
DC current gain
hFE IC = 10 mA, VCE = 5 V
IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltage
IC = 10 mA, IB = 1.0 mA
VCE(sat)
IC = 50 mA, IB = 5.0 mA
Base-emitter saturation voltage
IC = 10 mA, IB = 1.0 mA
VBE(sat)
IC = 50 mA, IB = 5.0 mA
Transiston frequency
fT VCE=10V,IC=10mA,f=100MHz
Collector output capacitance
Cob VCB=10V,IE=0,f=1MHz
Input capacitance
Cib VBE=0.5V,IC=0,f=1MHz
Noise figure
VCE=5V,Ic=0.25mA,
NF
f=10Hz to 15.7KHz,Rs=1kΩ
* Pulse Test: Pulse Width = 300 μs, Duty Cycle=2.0%.
■ Marking
Marking
K4N
Unit
V
V
V
A
mW
℃
Min Typ Max Unit
180
V
160
V
6
V
50 nA
50 nA
80
100
300
30
0.15
V
0.2
1.0
V
1.0
100
300 MHz
6 pF
20 pF
8 dB
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