MMST5401 Datasheet, PDF (1/1 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

■ Features
● Ultra-Small Surface Mount Package
● Ideal for Medium Power Amplification and
● Complementary NPN Type Available(MMST5551)
Product specification
MMST5401
SOT-323
1.3±0.1
0.65
12
Unit:mm
3
0.3±0.1
2.1±0.1
0.1
+0.05
-0.02
1 Emitter
2 Base
3 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Collector Power Dissipation
Junction and storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
TJ, Tstg
Rating
-160
-150
-5
-0.6
200
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC = -100 μA, IE = 0
Collector-emitter breakdown voltage
V(BR)CEO IC =- 1.0 mA, IB = 0
Emitter-base breakdown voltage
V(BR)EBO IE = -10 μA, IC = 0
Collector cutoff current
ICBO VCB =- 120 V, IE = 0
Emitter cutoff current
IEBO VEB = -4.0 V, IC = 0
IC = -1.0 mA, VCE = -5 V
DC current gain *
hFE IC = -10 mA, VCE = -5 V
IC = -50 mA, VCE = -5 V
Collector-emitter saturation voltage
VCE(sat) IC = -50 mA, IB = -5.0 mA
Base-emitter saturation voltage
VBE(sat) IC = -50 mA, IB = -5.0 mA
Transiston frequency
fT VCE=-5V,IC=-10mA,f=30MHz
* Pulse Test: Pulse Width = 300 μs, Duty Cycle=2.0%.
■ Marking
Marking
K4M
Unit
V
V
V
A
mW
℃
Min Typ Max Unit
-160
V
-150
V
-5
V
-0.1 μA
-0.1 μA
80
100
300
50
-0.5 V
-1.0 V
100
MHz
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