MMST4401 Datasheet, PDF (1/1 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Product specification
SOT-323 Plastic-Encapsulate Transistors
MMST4401 TRANSISTOR (NPN)
FEATURES
 Complementary to MMST4403
 Small Surface Mount Package
MARKING: K3X
SOT–323
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
40
VEBO Emitter-Base Voltage
6
IC
Collector Current
600
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100µA, IC=0
Collector cut-off current
ICBO
VCB=35V, IE=0
Collector cut-off current
ICEO
VCE=35V, IB=0
VCE=1V, IC=100µA
VCE=1V, IC=1mA
DC current gain
hFE
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
Collector-emitter saturation voltage
VCE(sat)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
Base-emitter saturation voltage
VBE(sat)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
Transition frequency
fT
VCE=10V,IC=20mA , f=100MHz
Collector output capacitance
Cob
VCB=5V, IE=0, f=1MHz
Min
Typ
Max Unit
60
V
40
V
6
V
100
nA
500
nA
20
40
80
100
300
40
0.4
V
0.75
V
0.75
0.95
V
1.2
V
250
MHz
6.5
pF
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