MMDT5451 Datasheet, PDF (1/2 Pages) Diodes Incorporated – COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Product specification
SOT-363 Plastic-Encapsulate Transistors
MMDT5451 DUAL TRANSISTOR (NPN+PNP)
FEATURES
z Epitaxial Planar Die Construction
z Ideal for low Power Amplification and Switching
z One 5551(NPN), one 5401(PNP)
MRKING:KNM
MAXIMUM RATINGS NPN 5551 (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
Rθ_JA
T_J
T_stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Value
180
160
6
0.2
0.2
625
150
-55-150
Units
V
V
V
A
W
℃/W
℃
℃
SOT-363
C1
B2
E2
E1
B1
C2
E1, B1, C1 = PNP 5401
E2, B2, C2 = NPN 5551
ELECTRICAL CHARACTERISTICS NPN 5551 (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
Symbol Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
V_CE(sat)
V_BE(sat)
C_obo
f_T
NF
I_C=100μA,I_E=0
I_C=1mA,I_B=0
I_E=10μA,I_C=0
V_CB=120V,I_E=0
V_EB=4V,I_C=0
V_CE=5V,I_C=1mA
V_CE=5V,I_C=10mA
V_CE=5V,I_C=50mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
V_CB = 10V, f = 1.0MHz, I_E = 0
V_CE = 10V, I_C = 10mA, f = 100MHz
V_CE= 5.0V, I_C = 200µA,
R_S = 1.0kΩ,f = 1.0kHz
Min Typ
180
160
6
80
100
30
100
Max Unit
V
V
V
0.05 μA
0.05 μA
300
0.15
V
0.2
V
1
V
1
V
6.0
pF
300 MHz
8.0
dB
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