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| MMDT4401 Datasheet, PDF (1/2 Pages) Transys Electronics – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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Product specification
SOT-363 Plastic-Encapsulate Transistors
MMDT4401 DUAL TRANSISTOR (NPN)
FEATURES
z Epitaxial Planar Die Construction
z Ideal for Low Power Amplification and Switching
SOT-363
MRKING:K2X
Maximum Ratings (Ta = 25â unless otherwise specified)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
60
40
6
0.6
0.2
625
150
-55 to +150
Units
V
V
V
A
W
â/W
â
â
NPN 4401 ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
td
tr
tS
tf
Test conditions
IC= 100 μA, IE=0
IC= 1mA, IB=0
IE= 100 μA, IC=0
VCB= 50 V , IE=0
VCE= 35 V , IB=0
VEB= 5V , IC=0
VCE= 1V, IC= 0.1mA
VCE= 1V, IC= 1mA
VCE= 1V, IC= 10mA
VCE= 1V, IC= 150mA
VCE= 2V, IC= 500mA
IC=150 mA, IB= 15mA
IC=500 mA, IB= 50mA
IC= 150 mA, IB= 15mA
IC= 500 mA, IB= 50mA
VCE= 10V,IC= 20mA,f=100MHz
VCB=5V, IE= 0,f=1MHz
VCC=30V,
VBE=2V,IC=150mA ,IB1=15mA
VCC=30V, IC=150mA,IB1=-IB2=15mA
Min Max
60
40
6
0.1
0.5
0.1
20
40
80
100 300
40
0.4
0.75
0.75 0.95
1.2
250
6.5
15
20
225
30
Unit
V
V
V
μA
μA
μA
V
V
V
V
MHz
pF
nS
nS
nS
nS
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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